Be responsible to perform detailed process and device simulations using advanced TCAD tools from concept through product release, to enable successful power IGBT/GaN technology development projects
• Collaborate with diverse global foundry to define experiments based on simulations, and to analyze and debug device and technology issues during process development
• Develop, document, and calibrate 2D and 3D TCAD virtual testbench (from layout through application simulation) for various technologies in collaboration with internal and external experts
• Investigate and apply AI/ML to optimization problems, implement new features into the design flow (eg. TCAD to SPICE)
• Carrying out new technology development to meet customer requirement in a manufacturable and cost-effective way under coaching
• Responsible to improve the device overall performance for the existing products, in particular, to improve the device reliability and robustness
• Performing TCAD process and device simulations, and layout design
• Creating and maintaining design rules and generation rules when required using controlled procedures
• Responsible for engineering device test (static, dynamic, reliability, etc) and data analysis, part of manually testing might be involved
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任职条件
What you will need
• In-depth understanding of semiconductor products and underlying technologies and associated failure modes. Knowledge of device construction, manufacturing, and test. Ability to create methods to reveal latent failure modes inside .
• Understanding of power device physics, fabrication and characterization principles.
• Experience in TCAD process and device simulation
• Knowledge in design for reliability and robustness of power devices.
• Proficient in reading English literature and writing in English
• Master’s degree or above, major in Microelectronics or semiconductor related
• Passion for semiconductor technology
• With strong sense of responsibility and team work spirit
• Good Communication skills in both oral and written English